ONSEMI - NVBG020N090SC1 - Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 112 A, 900 V, 0.02 ohm, TO-263 (D2PAK)
1 - 4₹3138.55
5 - 9₹2830.11
10 - 49₹2521.67
50 - 99₹2515.01
100 - 999999999₹2508.35
SKU: 3367862
Vendor Name: ONSEMI
Brand Name: ONSEMI
Part Number: NVBG020N090SC1
Product Details
- tariffCode: 85411000
- euEccn: NLR
- rohsCompliant: Y-EX
- hazardous: false
- rohsPhthalatesCompliant: YES
- Rds(on) Test Voltage: 15
- Gate Source Threshold Voltage Max: 2.6
- Transistor Case Style: TO-263 (D2PAK)
- isCanonical: Y
- No. of Pins: 7
- Drain Source Voltage Vds: 900
- MSL: MSL 1 - Unlimited
- Product Range: EliteSiC Series
- Channel Type: N Channel
- Power Dissipation: 477
- SVHC: Lead (25-Jun-2025)
- productTraceability: No
- usEccn: EAR99
- Continuous Drain Current Id: 112
- Operating Temperature Max: 175
- MOSFET Module Configuration: Single
- Drain Source On State Resistance: 0.02